PLANE 平面／結晶面
2014年05月27日
車馬駄馬田 at 08:00 | Comments(0) | pl...
目次はこちら
PLANE 平面／結晶面
$$ The solution to this problem is to have a second (or further) row of horns/channels in substantially the same plane as the first row, but with the horns of the second row offset or staggered in the elongate direction of the row. / この問題に対する解決策は、第１の列と実質的に同じ平面にホーン／チャネルの第２の（もしくは更なる）列を有することであるが、この第２の列は、列の長く延びる方向にオフセットし、又はズレている。(USP6900756)
$$ The resulting product comprises a silicon substrate with a V-groove with the angles of the side walls of the V-groove being determined by {111} planes. (USP5668823)
$$ In the case of smaller III-V material wafers, flats on the wafers are nominally aligned to their {110} crystal plane. (USP6977986)
$$ In SCS the {111} crystallographic planes are the slowest to be etched, so if a single crystal lying in the <001>direction is etched, the {111} planes should remain at an angle of 54.7° to the surface. (USP02066186)
目次はこちら
PLANE 平面／結晶面
$$ The solution to this problem is to have a second (or further) row of horns/channels in substantially the same plane as the first row, but with the horns of the second row offset or staggered in the elongate direction of the row. / この問題に対する解決策は、第１の列と実質的に同じ平面にホーン／チャネルの第２の（もしくは更なる）列を有することであるが、この第２の列は、列の長く延びる方向にオフセットし、又はズレている。(USP6900756)
$$ The resulting product comprises a silicon substrate with a V-groove with the angles of the side walls of the V-groove being determined by {111} planes. (USP5668823)
$$ In the case of smaller III-V material wafers, flats on the wafers are nominally aligned to their {110} crystal plane. (USP6977986)
$$ In SCS the {111} crystallographic planes are the slowest to be etched, so if a single crystal lying in the <001>direction is etched, the {111} planes should remain at an angle of 54.7° to the surface. (USP02066186)
目次はこちら
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