BACK SIDE / 裏面
2010年05月25日
目次はこちら
BACK SIDE /裏面
"backside"が用いられることは少ない。
$$ Dry back side etching has the advantage that the walls of the substrate 11 are vertical, as shown by way of example in FIGS. 18 and 18b. (USP02041003)
$$ For example, a viewpoint far outside of the image locus, with the viewer looking inwardly toward the locus, will require information as to the color and brightness of the back sides of objects which have their front sides facing towards the locus. (USP6327381)
$$ The pad 1260 may be loose laid; alternatively it may be fixed by adhesive or moisture, or by physical constraining such as by imparting risings to the back sides and front and back edges of the package during assembly. (USP6349526)
$$ The backside of the wafer is now processed by the chemical removal of the bulk semiconductor 20 down to the etch stop layer 22 using any conventional technique (FIG. 1e). / ウェーハーの裏面はそれから半導体２０をエッチング停止層２２まで、適当な方法で化学的に除去する（図１ｅ）。(USP6229411)
$$ Instead of wet anisotropic etching, dry back side etching may be used. (USP02034843)
$$ In a preferred embodiment, said terminal layer 103 may be in the form of a metal layer deposited from the back side of the device 10 after the membrane 16 is formed by single side back-etching. (USP02041003)
$$ The etch process was with electrostatic wafer clamping and helium back side pressurisation and wafer temperature will therefore be close to the platen temperature. (USP6933246)
目次はこちら
BACK SIDE /裏面
"backside"が用いられることは少ない。
$$ Dry back side etching has the advantage that the walls of the substrate 11 are vertical, as shown by way of example in FIGS. 18 and 18b. (USP02041003)
$$ For example, a viewpoint far outside of the image locus, with the viewer looking inwardly toward the locus, will require information as to the color and brightness of the back sides of objects which have their front sides facing towards the locus. (USP6327381)
$$ The pad 1260 may be loose laid; alternatively it may be fixed by adhesive or moisture, or by physical constraining such as by imparting risings to the back sides and front and back edges of the package during assembly. (USP6349526)
$$ The backside of the wafer is now processed by the chemical removal of the bulk semiconductor 20 down to the etch stop layer 22 using any conventional technique (FIG. 1e). / ウェーハーの裏面はそれから半導体２０をエッチング停止層２２まで、適当な方法で化学的に除去する（図１ｅ）。(USP6229411)
$$ Instead of wet anisotropic etching, dry back side etching may be used. (USP02034843)
$$ In a preferred embodiment, said terminal layer 103 may be in the form of a metal layer deposited from the back side of the device 10 after the membrane 16 is formed by single side back-etching. (USP02041003)
$$ The etch process was with electrostatic wafer clamping and helium back side pressurisation and wafer temperature will therefore be close to the platen temperature. (USP6933246)
目次はこちら
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